Structural rearrangements during the initial growth stages of organic thin films of F16CuPc on SiO2

Journal of Physical Chemistry B

Volumn 110, Issue 33, 2006, Pages 16618-16623

  De Oteyza, Dimas G ^a   Barrena, Esther ^a,b   Sellner, Stefan ^a   Ossó, J Oriol ^c   Dosch, Helmut ^a,b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; LATTICE CONSTANTS; MOLECULAR PHYSICS; X RAY DIFFRACTION;

GRAZING INCIDENCE X-RAY DIFFRACTION (GIXD); INTERFACIAL LAYER; MOLECULAR AGGREGATES; STRUCTURAL EVOLUTION;

THIN FILMS;

EID: 33748522019     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp061889u     Document Type: Article

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