A low power content addressable memory using low swing search lines

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 58, Issue 12, 2011, Pages 2849-2858

  Yang, Byung Do ^a   Lee, Yong Kyu ^b   Sung, Si Woo ^a   Min, Jae Joong ^a   Oh, Jae Mun ^a   Kang, Hyeong Ju ^c  

^a Chungbuk National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Korea University of Technology and Education   (South Korea)

Author keywords

Content addressable memory (CAM); low swing; match line; nand cell; nor cell; search line

Indexed keywords

ELECTRIC POWER UTILIZATION; MEMORY ARCHITECTURE;

CMOS PROCESSS; LOW POWER; LOW SWING; MATCH LINE; MAXIMUM OPERATING FREQUENCY; NOR-TYPE CAM; SEARCH LINES; SWING VOLTAGE;

ASSOCIATIVE STORAGE;

EID: 82555165055     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2011.2158703     Document Type: Article

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