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Volumn 57, Issue 1, 2010, Pages 31-35

A self-disabled sensing technique for content-addressable memories

Author keywords

Content addressable memories (CAMs); Match line sense amplifier (MLSA); NAND type CAM cell; Self disabled

Indexed keywords

CELLS; CYTOLOGY; DIFFERENTIAL AMPLIFIERS; ENERGY UTILIZATION; FUNCTIONS;

EID: 76149100206     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2009.2037995     Document Type: Article
Times cited : (43)

References (13)
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    • T. H. Kim, J. Liu, J. Keane, and C. H. Kim, "A 0.2 V, 480 kb subthreshold SRAM with 1 k cells per bitline for ultra-low-voltage computing," IEEE J. Solid-State Circuits, vol.43, no.2, pp. 518-529, Feb. 2008.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.