Visible-blind ultra-violet detector based on n-ZnO/p-Si heterojunction fabricated by plasma-assisted pulsed laser deposition

Solid State Communications

Volumn 143, Issue 8-9, 2007, Pages 421-424

  Gu, Y F ^a,b   Li, X M ^a   Zhao, J L ^a,b   Yu, W D ^a   Gao, X D ^a   Yang, C ^a,b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A. Heterojunction; B. Laser processing; C. Impurities in semiconductors; D. Photoconductivity and photovoltaics

Indexed keywords

LASER PROCESSING; PHOTOVOLTAICS; VISIBLE BLIND MECHANISMS; ZINC INTERSTITIALS;

CONCENTRATION (PROCESS); OXYGEN VACANCIES; PHOTOCONDUCTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; ULTRAVIOLET DETECTORS; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 34447644032     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.06.014     Document Type: Article

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