Electrical and deep levels characteristics of ZnO/ Si heterostructure by MOCVD deposition

Chinese Physics B

Volumn 17, Issue 6, 2008, Pages 2292-2296

  Liu, Ci Hui ^a   Liu, Bing Ce ^a   Fu, Zhu Xi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Deep level emission; MOCVD; PL spectra; ZnO Si heterostructure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPOSITION RATES; EPITAXIAL GROWTH; ION BEAM ASSISTED DEPOSITION; LIGHT EMISSION; LUMINESCENCE; METALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ZINC OXIDE;

CHEMICAL VAPOUR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DEEP LEVELS; GAS FLOW RATES; HETERO STRUCTURES; METAL ORGANIC (MO); P-TYPE SI; PHOTOLUMINESCENCE (PL) SPECTRUM; ZNO FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 46749105076     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/6/060     Document Type: Article

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