Passivation effects of 100 nm in0.4AlAs/In0.35GaAs metamorphic high-electron-mobility transistors with a silicon nitride layer by remote plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2341-2343

  Kim, Sungwon ^a   Jang, Kyoungchul ^a   Seol, Gyungseon ^a   Her, Jincherl ^a   Seo, Kwangseok ^a  

^a Seoul National University   (South Korea)

Author keywords

GaAs; High electron mobility transistor; Metamorphic; Passivation; Recess; Remote PECVD; Transconductance

Indexed keywords

PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; TRANSCONDUCTANCE;

BARRIER LAYERS; METAMORPHIC HIGH-ELECTRON- MOBILITY TRANSISTORS (MHEMT); PARASITIC RESISTANCE; PASSIVATION EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547687220     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2341     Document Type: Article

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