Co-tunneling current in very small Si single-electron transistors

Physica B: Condensed Matter

Volumn 227, Issue 1-4, 1996, Pages 105-108

  Takahashi, Y ^a   Horiguchi, S ^a   Fujiwara, A ^a   Murase, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Co tunneling; Silicon; Single electron

Indexed keywords

ELECTRIC CURRENTS; MANUFACTURE; OXIDATION; SILICON; TEMPERATURE;

CO-TUNNELING; SINGLE-ELECTRON;

TRANSISTORS;

EID: 0030234015     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(96)00374-2     Document Type: Article

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