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Volumn 56, Issue 10, 2009, Pages 2357-2362

A two-dimensional analytical solution for short-channel effects in nanowire MOSFETs

Author keywords

MOSFETs; Nanowire; Short channel effect (SCE).

Indexed keywords

ANALYTICAL MODEL; ANALYTICAL SOLUTIONS; CURRENT CONTINUITY; CYLINDRICAL COORDINATES; DRAIN-INDUCED BARRIER LOWERING; ELECTROSTATIC POTENTIALS; GATE INSULATOR; MOSFETS; NANOWIRE MOSFETS; NUMERICAL SIMULATION; POISSON'S EQUATION; SHORT-CHANNEL EFFECT; SHORT-CHANNEL EFFECT (SCE).; SUB-THRESHOLD CURRENT; SUBTHRESHOLD REGION; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE ROLL-OFF; TWO-DIMENSION;

EID: 70350056898     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2028048     Document Type: Article
Times cited : (51)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.