Pattern placement error due to resist charging effect at 50kV e-beam writer; Mechanism and its correction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8166, Issue , 2011, Pages

  Choi, Jin ^a   Bae, Suk Jong ^a   Kim, Hee Bom ^a   Kim, B G ^a   Cho, Han Ku ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Charging effect; E beam writer; Photomask; Registration error

Indexed keywords

CD VARIATION; CHARGING EFFECT; CORRECTION METHOD; DOUBLE EXPOSURE; E-BEAM WRITER; PATTERN DENSITY; PATTERN PLACEMENT ERRORS; PATTERN POSITION; PATTERN SHAPE; POSITION ERRORS; REGISTRATION ERROR; SIZE AND POSITION; WAFER PATTERNS;

EXPERIMENTS; EXTREME ULTRAVIOLET LITHOGRAPHY;

PHOTOMASKS;

EID: 81455135284     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.898856     Document Type: Conference Paper

References (20)

1. International Technology Roadmap for Semiconductors, 2010 edition, http://public.itrs.net
2. Y. Chang, et. al., "Effects of mask bias on the mask error enhancement factor for low k1 lithography process," SPIE Vol. 5853, 757 (2005).
3. S. Hsu, et. al., "Double exposure technique for 45nm node and beyond," SPIE Vol. 5992, 59921Q (2005).
4. H. Sewell, et. al., "High-n immersion lithography," SPIE Vol. 6924, 692415 (2008).
5. B. LaFontaine, et. al., "The use of EUV lithography to produce demonstration devices," SPIE Vol. 6921, 69210P (2008).
6. Robert de Kruif, et. al., "Wafer based mask characterization for double patterning lithography," Proc. SPIE Vol. 6792, 679204 (2008).
7. Jin Choi, et. al., "Requirements of photomask registration for the 45nm node and beyond: is it possible?," SPIE Vol. 6730, 67301O (2007).
8. Jin Choi, et. al., "Resist charging effect in photomask: Its impact on pattern placement error and critical dimension," J. Vac. Sci. Technol. B 26, 2345 (2008)
9. Mihir Parikh and David F. Kyser, "Energy deposition functions in electron resist films on substrates," J. Appl. Phys. Vol. 50, 1104 (1979)
10. N. Kuwahara, H. Nakagawa, M. Kurihara, N. Hayashi, H. Sano, E. Maruta, T. Takikawa, and S. Noguchi, "Preliminary evaluation of proximity and resist heating effects observed in high acceleration voltage e-beam writing for 180-nm-and-beyond rule reticle fabrication," SPIE Vol. 3748, 115 (1999)
11. J. Sulkimo et. al., "G4-a simulation toolkit," Nucl. Instr. and Meth. A Vol. 506, 250 (2003)
12. E. Kieft and E. Bosch, "Refinement of Monte Carlo simulations of electron-specimen interaction in low-voltage SEM," J. Phys. D: Appl. Phys. Vol. 41, 215310 (2008)
13. M. Bai, D. Picard, C. Tanasa, M. A. McCord, C. N. Bergiund and R. Fabian W. Pease, "Resist charging in electronbeam lithography," SPIE Vol. 3546, 383 (1998)
14. Y. U. Ko and D. C. Joy, "Monte Carlo model of charging in resists in e-beam lithography," Proc. SPIE Vol. 4344, 544 (2001)
15. S. S. Borisov, E. A. Grachev, S. I. Zaitsev, N. N. Negulyaev, and E. A. Cheremukhin, "Modeling of dielectric polarization during an electron beam exposure," SPIE Vol. 5398, 186 (2004)
16. A. Melchinger and S. Hofmann, "Dynamic double layer model: Description of time dependent charging phenomena in insulators under electron beam irradiation ," J. Appl. Phys. Vol. 78, No. 10, 6224-6232 (1995)
17. N. Nakayamada, S. Wake, T. Kamikubo, H. Sunaoshi, S. Tamamushi, "Modeling of charging effect and its correction by EB mask writer EBM-6000," SPIE Vol. 7028, 70280C, (2008)
18. B. Alles, E. Cotte, B. Simeon, and T. Wandel, "Modeling the work piece charging during e-beam lithography," SPIE Vol. 6924, 182 (2008)
19. S. Rizvi, Handbook of photomask manufacturing technology, 1st edition, Chapter 16 (2005)
20. H. Seiler, "Secondary electron emission in the scanning electron microscope," J. Appl. Phys., Vol. 54, R1 (1983)