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Volumn 6792, Issue , 2008, Pages
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Wafer based mask characterization for double patterning lithography
a b a a d c b a d
a
ASML
(Netherlands)
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Author keywords
Double patterning; Mask metrology; Overlay; Wafer metrology
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Indexed keywords
ARCHITECTURAL DESIGN;
COMPUTER NETWORKS;
LITHOGRAPHY;
MEASUREMENTS;
MICROFLUIDICS;
MULTITASKING;
NANOTECHNOLOGY;
NUMERICAL METHODS;
PAPER;
PROCESS DESIGN;
PROCESS ENGINEERING;
STANDARDS;
TARGETS;
TECHNOLOGY;
TITRATION;
(E ,3E) PROCESS;
(P ,P ,T) MEASUREMENTS;
APPLIED (CO);
BAR IN BAR;
DOUBLE EXPOSURE;
DOUBLE PATTERNING;
EUROPEAN;
EXPOSURE TOOLS;
INTRA FIELD;
LINE PROCESS;
ON-WAFER;
TECHNICAL CHALLENGES;
WAFER FAB;
OPTICAL INSTRUMENTS;
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EID: 44949262881
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.798515 Document Type: Conference Paper |
Times cited : (7)
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References (2)
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