Requirements of photomask registration for the 45nm node and beyond: Is it possible?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Choi, Jin ^a   Kim, Hee Bom ^a   Lee, Sang Hee ^a   Lee, Dong Hun ^a   Jeong, Hae Young ^a   Lee, Jeung Woo ^a   Kim, Byung Gook ^a   Woo, Sang Gyun ^a   Cho, Han Ku ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

e beam positioning; ITRS roadmap; Patterning effect; Pellicle attachement; Registration; Sampling error of measurement

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ERROR ANALYSIS; MEASUREMENT ERRORS; NANOELECTRONICS; PHOTOMASKS;

E-BEAM POSITIONING; PATTERNING EFFECT; PELLICLE ATTACHMENT; PHOTOMASK REGISTRATION; SAMPLING ERROR OF MEASUREMENT;

SEMICONDUCTOR DEVICE MANUFACTURE;

ELECTRON BEAMS; LITHOGRAPHY; MASKING; SEMICONDUCTOR DEVICES;

EID: 42149143738     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746571     Document Type: Conference Paper

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