Modeling the work piece charging during e-beam lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Alles, Benjamin ^a   Cotte, Eric ^b   Simeon, Bernd ^a   Wander, Timo ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b Advanced Mask Technology Center   (Germany)

Author keywords

Charging; e beam pattern generation; Model; Placement accuracy

Indexed keywords

CHARGED PARTICLES; DEPOSITS; ELECTRON BEAMS; ELECTRON GUNS; ELECTRON OPTICS; ELECTRONS; PARTICLE BEAMS; PHOTOMASKS;

CHARGING (MATERIALS); CHARGING EFFECTS; DEFLECTION (OVALIZATION); E BEAM LITHOGRAPHY; MASK BLANKS; OPTICAL MICRO LITHOGRAPHY; PLACEMENT ACCURACY; SUPERIOR RESOLUTION; WORK-PIECE (WP);

ELECTRON BEAM LITHOGRAPHY;

EID: 45449101521     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.776651     Document Type: Conference Paper

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