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Volumn 26, Issue 6, 2008, Pages 2345-2350
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Resist charging effect in photomask: Its impact on pattern placement error and critical dimension
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Author keywords
[No Author keywords available]
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Indexed keywords
PHOTOLITHOGRAPHY;
CHARGING EFFECTS;
CORRECTION METHODS;
CRITICAL DIMENSION VARIATIONS;
CRITICAL DIMENSIONS;
DOUBLE EXPOSURES;
DOUBLE PATTERNING;
FEP-171;
PATTERN DENSITIES;
PATTERN PLACEMENT ERRORS;
PATTERN POSITIONS;
PATTERN SHAPES;
POSITION ERRORS;
WAFER PATTERNS;
HOLOGRAMS;
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EID: 57249104985
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2978406 Document Type: Article |
Times cited : (4)
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References (14)
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