Monte Carlo model of charging in resists in e-beam lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue , 2001, Pages 544-551

  Ko, Y U ^a   Joy, D C ^a  

^a UNIVERSITY OF TENNESSEE   (United States)

Author keywords

Beam deflection; Charging; Electron beam lithography; Insulator; Mask pattern

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTRON BEAM LITHOGRAPHY; MATHEMATICAL MODELS; MONTE CARLO METHODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES;

MASK PATTERNS;

MASKS;

EID: 0034763817     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436751     Document Type: Conference Paper

References (13)

1. Charging effects from electron beam lithography
2. A study of deposited charge from electron beam lithography
3. Charging effects on trilevel resist and metal layer in electron-beam lithography
4. Resist charging in electron beam lithography
5. Charging and discharging of electron beam resist films
6. Dynamic double layer model: Description of time dependent charging phenomena in insulator under electron beam irradiation
7. Monte Carlo model of charging in resists in e-beam lithography
8. Electron trajectory tracking algorithms for analyzing voltage contrast signals in the scanning electron microscope
9. Monte Carlo simulation of charging effects on linewidth measurement metrology
10. Monte Carlo simulation of charging effects on linewidth measurement metrology (II): On insulator substrate
11. Computer modeling of charging induced electron beam deflection in electron beam lithography