-
1
-
-
3142773890
-
Introduction to flash memory
-
DOI 10.1109/JPROC.2003.811702
-
R. Bez, E. Camerlenghi, A. Modelli, and A. Visconti Introduction to flash memory Proc IEEE 91 2003 489 501 (Pubitemid 43773305)
-
(2003)
Proceedings of the IEEE
, vol.91
, Issue.4
, pp. 489-501
-
-
Bez, R.1
Camerlenghi, E.2
Modelli, A.3
Visconti, A.4
-
2
-
-
34249001433
-
Memory technology in the future
-
DOI 10.1016/j.mee.2007.04.120, PII S0167931707004935, INFOS 2007
-
K. Kim, and S.Y. Lee Memory technology in the future Microelectron Eng 84 2007 1976 1981 (Pubitemid 46783947)
-
(2007)
Microelectronic Engineering
, vol.84
, Issue.9-10
, pp. 1976-1981
-
-
Kim, K.1
Lee, S.Y.2
-
3
-
-
0029516376
-
-
S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan Tech Dig - Int Electron Devices Meet 1995 1995 521
-
(1995)
Tech Dig - Int Electron Devices Meet 1995
, pp. 521
-
-
Tiwari, S.1
Rana, F.2
Chan, K.3
Hanafi, H.4
Chan, W.5
Buchanan, D.6
-
4
-
-
33846567589
-
Charging phenomena in pentacene-gold nanoparticle memory device
-
042906-3
-
W.L. Leong, P.S. Lee, S.G. Mhaisalkar, T.P. Chen, and A. Dodabalapur Charging phenomena in pentacene-gold nanoparticle memory device Appl Phys Lett 90 2007 042906-3
-
(2007)
Appl Phys Lett
, vol.90
-
-
Leong, W.L.1
Lee, P.S.2
Mhaisalkar, S.G.3
Chen, T.P.4
Dodabalapur, A.5
-
5
-
-
0036714604
-
Metal nanocrystal memories - Part I: Device design and fabrication
-
DOI 10.1109/TED.2002.802617, PII 1011092002802617
-
Z. Liu, C. Lee, V. Narayanan, G. Pei, and E.C. Kan Metal nanocrystal memories - part I: device design and fabrication IEEE Trans Electron Devices 49 2002 1606 1613 (Pubitemid 35017147)
-
(2002)
IEEE Transactions on Electron Devices
, vol.49
, Issue.9
, pp. 1606-1613
-
-
Liu, Z.1
Lee, C.2
Narayanan, V.3
Pei, G.4
Kan, E.C.5
-
6
-
-
40849120852
-
-
C. Novembre, D. Guerin, K. Lmimouni, C. Gamrat, and D. Vuillaume Appl Phys Lett 92 2008 103314
-
(2008)
Appl Phys Lett
, vol.92
, pp. 103314
-
-
Novembre, C.1
Guerin, D.2
Lmimouni, K.3
Gamrat, C.4
Vuillaume, D.5
-
7
-
-
0942268356
-
Detection and characterization of silicon nanocrystals embedded in thin oxide layers
-
M. Perego, S. Ferrari, M. Fanciulli, G.B. Assayag, C. Bonafos, and M. Carrada Detection and characterization of silicon nanocrystals embedded in thin oxide layers J Appl Phys 95 2004 257 262
-
(2004)
J Appl Phys
, vol.95
, pp. 257-262
-
-
Perego, M.1
Ferrari, S.2
Fanciulli, M.3
Assayag, G.B.4
Bonafos, C.5
Carrada, M.6
-
8
-
-
1242352420
-
Mechanism for bistability in organic memory elements
-
L.D. Bozano, B.W. Kean, V.R. Deline, J.R. Salem, and J.C. Scott Mechanism for bistability in organic memory elements Appl Phys Lett 84 2004 607 609
-
(2004)
Appl Phys Lett
, vol.84
, pp. 607-609
-
-
Bozano, L.D.1
Kean, B.W.2
Deline, V.R.3
Salem, J.R.4
Scott, J.C.5
-
9
-
-
79956011470
-
Organic electrical bistable devices and rewritable memory cells
-
DOI 10.1063/1.1473234
-
L.P. Ma, J. Liu, and Y. Yang Organic electrical bistable devices and rewritable memory cells Appl Phys Lett 80 2002 2997 (Pubitemid 34599224)
-
(2002)
Applied Physics Letters
, vol.80
, Issue.16
, pp. 2997
-
-
Ma, L.P.1
Liu, J.2
Yang, Y.3
-
10
-
-
10044271110
-
Programmable polymer thin film and non-volatile memory device
-
J. Ouyang, C.W. Chu, C.R. Szmanda, L. Ma, and Y. Yang Programmable polymer thin film and non-volatile memory device Nat Mater 3 2004 918 922
-
(2004)
Nat Mater
, vol.3
, pp. 918-922
-
-
Ouyang, J.1
Chu, C.W.2
Szmanda, C.R.3
Ma, L.4
Yang, Y.5
-
11
-
-
0031635781
-
Recent advances in the development of processable high-temperature polymers
-
M.A. Meador Recent advances in the development of processable high-temperature polymers Annu Rev Mater Sci 28 1998 599 630 (Pubitemid 128631430)
-
(1998)
Annual Review of Materials Science
, vol.28
, Issue.1
, pp. 599-630
-
-
Meador, M.A.1
-
12
-
-
33847349694
-
Thin-film polyimide/indium tin oxide composites for photovoltaic applications
-
DOI 10.1002/app.24470
-
A.E. Lozano, J. De Abajo, J.G. De La Campa, C. Guillén, J. Herrero, and M.T. Gutiérrez Thin-film polyimide/indium tin oxide composites for photovoltaic applications J Appl Polym Sci 103 2007 3491 3497 (Pubitemid 46347172)
-
(2007)
Journal of Applied Polymer Science
, vol.103
, Issue.6
, pp. 3491-3497
-
-
Lozano, A.E.1
De Abajo, J.2
De La Campa, J.G.3
Guillen, C.4
Herrero, J.5
Gutierrez, M.T.6
-
13
-
-
34247593421
-
Electroluminescence and electron transport characteristics of aromatic polyimides containing 1,3,4-oxadiazole moiety
-
S.C. Hsu, W.T. Whang, and C.S. Chao Electroluminescence and electron transport characteristics of aromatic polyimides containing 1,3,4-oxadiazole moiety Thin Solid Films 515 2007 6943 6948
-
(2007)
Thin Solid Films
, vol.515
, pp. 6943-6948
-
-
Hsu, S.C.1
Whang, W.T.2
Chao, C.S.3
-
14
-
-
34547828836
-
Polymer memories: Bistable electrical switching and device performance
-
DOI 10.1016/j.polymer.2007.06.025, PII S0032386107006076
-
Q.D. Ling, D.J. Liaw, E.Y.H. Teo, C. Zhu, D.S.H. Chan, and E.T. Kang Polymer memories: bistable electrical switching and device performance Polymer 48 2007 5182 5201 (Pubitemid 47247452)
-
(2007)
Polymer
, vol.48
, Issue.18
, pp. 5182-5201
-
-
Ling, Q.-D.1
Liaw, D.-J.2
Teo, E.Y.-H.3
Zhu, C.4
Chan, D.S.-H.5
Kang, E.-T.6
Neoh, K.-G.7
-
16
-
-
33645139969
-
Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer
-
J.H. Jung, J.Y. Jin, I. Lee, T.W. Kim, H.G. Roh, and Y.H. Kim Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer Appl Phys Lett 88 2006 112107
-
(2006)
Appl Phys Lett
, vol.88
, pp. 112107
-
-
Jung, J.H.1
Jin, J.Y.2
Lee, I.3
Kim, T.W.4
Roh, H.G.5
Kim, Y.H.6
-
18
-
-
33947683412
-
Formation of gold nanoparticles embedded in a polyimide film for nanofloating gate memory
-
J.H. Kim, K.H. Baek, C.K. Kim, Y.B. Kim, and C.S. Yoon Formation of gold nanoparticles embedded in a polyimide film for nanofloating gate memory Appl Phys Lett 90 2007 123118
-
(2007)
Appl Phys Lett
, vol.90
, pp. 123118
-
-
Kim, J.H.1
Baek, K.H.2
Kim, C.K.3
Kim, Y.B.4
Yoon, C.S.5
-
19
-
-
17044410869
-
Formation and electrical properties of Ni1-x Fex nanocrystals embedded in a polyimide layers for applications as nonvolatile flash memories
-
DOI 10.1063/1.1850194, 032904
-
x nanocrystals embedded in a polyimide layers for applications as nonvolatile flash memories Appl Phys Lett 86 2005 1 3 (Pubitemid 40493490)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.3
, pp. 1-3
-
-
Kim, J.H.1
Jin, J.Y.2
Jung, J.H.3
Lee, I.4
Kim, T.W.5
Lim, S.K.6
Yoon, C.S.7
Kim, Y.-H.8
-
22
-
-
0035477011
-
Direct observation of structural changes in organic light emitting devices during degradation
-
DOI 10.1063/1.1389760
-
D. Kolosov, D.S. English, V. Bulovic, P.F. Barbara, S.R. Forrest, and M.E. Thompson Direct observation of structural changes in organic light emitting devices during degradation J Appl Phys 90 2001 3242 3247 (Pubitemid 33596961)
-
(2001)
Journal of Applied Physics
, vol.90
, Issue.7
, pp. 3242-3247
-
-
Kolosov, D.1
English, D.S.2
Bulovic, V.3
Barbara, P.F.4
Forrest, S.R.5
Thompson, M.E.6
-
23
-
-
0034454561
-
Engineering variations: Towards practical single-electron (few-electron) memory
-
T. Ishii, T. Osabe, T. Mine, F. Murai, and K. Yano Engineering variations: towards practical single-electron (few-electron) memory Tech Dig - Int Electron Devices Meet 2000 2000 305
-
(2000)
Tech Dig - Int Electron Devices Meet 2000
, pp. 305
-
-
Ishii, T.1
Osabe, T.2
Mine, T.3
Murai, F.4
Yano, K.5
-
27
-
-
29244455661
-
Asymmetric electric field enhancement in nanocrystal memories
-
DOI 10.1109/LED.2005.859634
-
C. Lee, U. Ganguly, V. Narayanan, T.H. Hou, J. Kim, and E.C. Kan Asymmetric electric field enhancement in nanocrystal memories IEEE Electron Device Lett 26 2005 879 881 (Pubitemid 41825082)
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.12
, pp. 879-881
-
-
Lee, C.1
Ganguly, U.2
Narayanan, V.3
Hou, T.-H.4
Kim, J.5
Kan, E.C.6
-
28
-
-
53749095946
-
Study of charge storage characteristics of memory devices embedded with metallic nanoparticles
-
C. Sargentis, K. Giannakopoulos, A. Travlos, P. Normand, and D. Tsamakis Study of charge storage characteristics of memory devices embedded with metallic nanoparticles Superlattices Microstruct 44 2008 483 488
-
(2008)
Superlattices Microstruct
, vol.44
, pp. 483-488
-
-
Sargentis, C.1
Giannakopoulos, K.2
Travlos, A.3
Normand, P.4
Tsamakis, D.5
-
30
-
-
79952146219
-
Polymer and organic nonvolatile memory devices
-
P. Heremans, G.H. Gelinck, R. Muller, K.J. Baeg, D.Y. Kim, and Y.Y. Noh Polymer and organic nonvolatile memory devices Chem Mater 23 2011 341 358
-
(2011)
Chem Mater
, vol.23
, pp. 341-358
-
-
Heremans, P.1
Gelinck, G.H.2
Muller, R.3
Baeg, K.J.4
Kim, D.Y.5
Noh, Y.Y.6
-
31
-
-
43049133276
-
Comparison of discrete-storage nonvolatile memories: Advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory
-
Q. Wang, R. Jia, W. Guan, W. Li, Q. Liu, and Y. Hu Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory J Phys D 41 2008 035109
-
(2008)
J Phys D
, vol.41
, pp. 035109
-
-
Wang, Q.1
Jia, R.2
Guan, W.3
Li, W.4
Liu, Q.5
Hu, Y.6
-
32
-
-
67349256765
-
Memory characteristics of platinum nanoparticle-embedded MOS capacitors
-
B. Park, K. Cho, Y.S. Koo, and S. Kim Memory characteristics of platinum nanoparticle-embedded MOS capacitors Curr Appl Phys 9 2009 1334 1337
-
(2009)
Curr Appl Phys
, vol.9
, pp. 1334-1337
-
-
Park, B.1
Cho, K.2
Koo, Y.S.3
Kim, S.4
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