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Volumn 46, Issue 1-2, 2009, Pages 176-181
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Electrical characterization of nonvolatile memory with SnO2 nano-particle in polyimide dielectric layer
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Author keywords
Nano particles; NFGM; Nonvolatile memory; Polyimide; SnO2
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Indexed keywords
AVERAGE DIAMETER;
DIELECTRIC LAYER;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL CHARACTERIZATION;
FOWLER-NORDHEIM TUNNELING;
MEMORY WINDOW;
NFGM;
NON-VOLATILE MEMORIES;
NONVOLATILE MEMORY;
P-TYPE;
PARTICLE DENSITIES;
POLYMER LAYERS;
RETENTION PROPERTIES;
SELF-ASSEMBLED;
SILION-ON-INSULATOR WAFERS;
SNO2;
SPHERICAL SHAPE;
SUBTHRESHOLD;
THRESHOLD VOLTAGE SHIFTS;
CHEMICAL REACTIONS;
ELECTRIC NETWORK ANALYSIS;
ELECTRON TUBE DIODES;
POLYIMIDES;
POLYMER FILMS;
SILICON COMPOUNDS;
THRESHOLD VOLTAGE;
TIN;
TUNNELING (EXCAVATION);
NANOPARTICLES;
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EID: 67249155711
PISSN: 07496036
EISSN: 10963677
Source Type: Journal
DOI: 10.1016/j.spmi.2009.01.002 Document Type: Article |
Times cited : (9)
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References (15)
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