Memory characteristics of platinum nanoparticle-embedded MOS capacitors

Current Applied Physics

Volumn 9, Issue 6, 2009, Pages 1334-1337

  Park, Byoungjun ^a   Cho, Kyoungah ^a   Koo, Yong Seo ^b   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Seokyeong University   (South Korea)

Author keywords

Memory; Nanoparticle; Platinum

Indexed keywords

C-V CURVE; CAPACITANCE CHARACTERISTICS; CHARGE STORAGE; EMBEDDED METALS; FLAT-BAND VOLTAGE SHIFT; FLOATING GATES; MEMORY; OXIDE LAYER; PLATINUM NANOPARTICLES; SI SUBSTRATES; TIME CURVES;

CAPACITANCE; CAPACITORS; MOSFET DEVICES; NANOPARTICLES; PLATINUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

MOS CAPACITORS;

EID: 67349256765     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.02.013     Document Type: Article

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