Comparison of discrete-storage nonvolatile memories: Advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory

Journal of Physics D: Applied Physics

Volumn 41, Issue 3, 2008, Pages

  Wang, Qin ^a   Jia, Rui ^a   Guan, Weihua ^a   Li, Weilong ^a   Liu, Qi ^a   Hu, Yuan ^a   Long, Shibing ^a   Chen, Baoqin ^a   Liu, Ming ^a   Ye, Tianchun ^a   Lu, Wensheng ^b   Jiang, Long ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b INSTITUTE OF CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GOLD; MOS CAPACITORS; NANOCRYSTALS; SYNTHESIS (CHEMICAL);

DISCRETE STORAGE NONVOLATILE MEMORIES; MEMORY WINDOWS; RETENTION CHARACTERISTICS;

NONVOLATILE STORAGE;

EID: 43049133276     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/3/035109     Document Type: Article

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