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Physica B: Condensed Matter

Volumn 407, Issue 1, 2012, Pages 64-67

The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering

(6) Ye, Fan a Cai, Xing Min a Dai, Fu Ping b Zhang, Dong Ping a Fan, Ping a Liu, Li Jun a

a SHENZHEN UNIVERSITY (China)

b NORTHWESTERN POLYTECHNICAL UNIVERSITY (China)

Author keywords

DC sputtering; Field emission; Indium doping; ZnO

Indexed keywords

BAND-EDGE EMISSIONS; COSPUTTERING; DC SPUTTERING; ELECTRON-ACCEPTOR TRANSITION; EMISSION CURRENT DENSITY; EMISSION PEAKS; FIELD EMISSION PROPERTY; FLOW OF OXYGEN; INDIUM DOPING; INDIUM-DOPED ZNO; OXYGEN SITE; ROOM TEMPERATURE; ROOM TEMPERATURE DC MAGNETRON SPUTTERING; SECONDARY PHASIS; SUBSTITUTIONAL NITROGEN; TURN-ON FIELD; ZNO;

FIELD EMISSION; METALLIC FILMS; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; ZINC; ZINC OXIDE;

INDIUM;

EID: 81255185037 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.09.120 Document Type: Article

Times cited : (15)

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