Field emission from amorphous GaN deposited on Si by dc sputtering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1358-1361

  Ye, F ^a   Xie, E Q ^a   Pan, X J ^a   Li, H ^a   Duan, H G ^a   Jia, C W ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTRON DIFFRACTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; SILICON; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FIELD EMISSION; NANOCRYSTALLINE GRAINS; STRETCHING VIBRATION BOND;

GALLIUM NITRIDE;

EID: 33744827986     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198854     Document Type: Article

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