The influence of morphologies and doping of nanostructured ZnO on the field emission behaviors

Solid-State Electronics

Volumn 53, Issue 6, 2009, Pages 578-583

  Zhang, Zesong ^a   Huang, Jingyun ^a   He, Haiping ^a   Lin, Shisheng ^a   Tang, Haiping ^a   Lu, Huanming ^a   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Al doped; Field emission; Morphologies; Nanostructured ZnO

Indexed keywords

AL-DOPED; AL-DOPED ZNO; EMISSION CURRENT DENSITIES; EMISSION PERFORMANCE; EMISSION STABILITIES; FIELD ENHANCEMENT FACTORS; FIELD-EMISSION BEHAVIORS; FIELD-EMISSION PROPERTIES; NANO-SCALE; NANOSTRUCTURED ZNO; NANOWIRE ARRAYS; TURN-ON FIELDS; ZNO NANOTIPS; ZNO NANOWIRES;

ALUMINUM; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC WIRE; FIELD EMISSION; MORPHOLOGY; NANOTIPS; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS;

ZINC OXIDE;

EID: 65549118694     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.024     Document Type: Article

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