A novel phenomenon: p-Type ZnO:Al films deposited on n-Si substrate

Physica B: Condensed Matter

Volumn 404, Issue 8-11, 2009, Pages 1097-1101

  Jin, Hu Jie ^a   Song, Min Jong ^b   Park, Choon Bae ^a  

^a Wonkwang University   (South Korea)

^b Gwangju Health College University   (South Korea)

Author keywords

Al doped p type ZnO; Oxygen ambient; RF magnetron sputtering

Indexed keywords

ACCEPTOR LEVELS; AL-DOPED P-TYPE ZNO; AL-DOPED ZNO; AMBIENT OXYGENS; CALCULATED VALUES; COMPACT STRUCTURES; CROSS-SECTION IMAGES; DONOR LEVELS; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; HOMO-BUFFER LAYERS; OXYGEN AMBIENT; P TYPES; P-TYPE ZNO; P-TYPE ZNO FILMS; PHOTOLUMINESCENCE SPECTRUM; RF MAGNETRON SPUTTERING; SHOULDER PEAKS; SI SUBSTRATES; SI(1 0 0 ); SPUTTERING TARGETS; XRD SPECTRUM; ZNO CERAMICS;

BUFFER LAYERS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; FIELD EMISSION; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; ZINC OXIDE;

ALUMINUM;

EID: 64549147069     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.11.078     Document Type: Article

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