Field emission properties of indium-doped ZnO tetrapods

Current Applied Physics

Volumn 9, Issue 2 SUPPL., 2009, Pages

  Jung, M N ^a   Ha, S H ^b   Oh, S J ^a   Koo, J E ^a   Cho, Y R ^b   Lee, H C ^a   Lee, S T ^a   Jeon, T I ^a   Makino, H ^c   Chang, J H ^a  

^a Korea Maritime University   (South Korea)

^b Pusan National University   (South Korea)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Doping; Field emission; Nanostructure; Tetrapods; ZnO

Indexed keywords

BURSTEIN; DOPING; FIELD EMISSION PROPERTY; HEXAGONAL PHASE; IMPURITY DOPING; INDIUM-DOPED ZNO; POWDER X RAY DIFFRACTION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL QUALITIES; TETRAPODS; TRANSPORTATION METHOD; VAPOR PHASE; ZNO;

CARRIER CONCENTRATION; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; FIELD EMISSION; HEAT SHIELDING; INDIUM; NANOSTRUCTURES; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 67349108700     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.12.052     Document Type: Article

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