SCOPUS 정보 검색 플랫폼

Volumn 23, Issue 2-4, 2009, Pages 536-541

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

(6) Park, Young Ran a Jung, Donggeun a Kim, Ki Chul b Suh, Su Jeong a Park, Tae Seok a Kim, Young Sung a

a Sungkyunkwan University (South Korea)

b Mokwon University (South Korea)

Author keywords

In doped ZnO (IZO); Pulse DC magnetron sputtering; Raman spectra; Semiconductor; Transparent conducting oxide (TCO)

Indexed keywords

ABSORPTION EDGES; ADDITIONAL MODE; DC MAGNETRON SPUTTERING; DEPOSITION CONDITIONS; DOPED ZINC OXIDE THIN FILMS; DOPED ZNO; EFFECT OF IN; EFFECT OF PULSE; GLASS SUBSTRATES; HIGH MOBILITY; HIGH TRANSMITTANCE; HOST-LATTICE DEFECTS; MICRO-RAMAN; OPTICAL SPECTRA; PHONON MODE; PULSE FREQUENCIES; PULSED DC MAGNETRON SPUTTERING; RAMAN SPECTRA; TRANSPARENT CONDUCTING OXIDE; UV-VISIBLE; ZNO;

CONDUCTIVE FILMS; DOPING (ADDITIVES); INDIUM; MAGNETRON SPUTTERING; MAGNETRONS; PHYSICAL PROPERTIES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SURFACE ROUGHNESS; THIN FILMS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 73449117541 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-008-9530-2 Document Type: Article

Times cited : (13)

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