Optical bandgap modeling of thermal annealed ZnO:Ga thin films using neural networks

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 7, 2010, Pages 1572-1576

  Kim, Chang Eun ^a   Moon, Pyung ^a   Yun, Ilgu ^a   Kim, Sungyeon ^a   Myoung, Jae Min ^a   Jang, Hyeon Woo ^b   Bang, Jungsik ^b  

^a Yonsei University   (South Korea)

^b LG Chemical Ltd   (South Korea)

Author keywords

Annealing; Doping; Modeling; Optical properties; ZnO

Indexed keywords

ADDITIONAL SAMPLES; ANNEALING PROCESS; ANNEALING TEMPERATURES; BURSTEIN-MOSS EFFECTS; DOPING; ERROR BACK-PROPAGATION; FACTORIAL EXPERIMENTAL DESIGN; INPUT FACTORS; MODELING; MODELING RESULTS; MULTI LAYER PERCEPTRON; OUTPUT RESPONSE; OUTPUT VALUES; RESPONSE SURFACE MODELS; SURFACE PLOTS; THERMAL ANNEALING PROCESS; TRANSPARENT CONDUCTIVE OXIDES; ZNO; ZNO:GA THIN FILMS;

ANNEALING; BACKPROPAGATION ALGORITHMS; CARRIER CONCENTRATION; CONDUCTIVE FILMS; ENERGY GAP; FILM PREPARATION; GALLIUM; MULTILAYER FILMS; NEURAL NETWORKS; OPTICAL BAND GAPS; OPTICAL MULTILAYERS; OXIDE FILMS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 77955638595     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983715     Document Type: Article

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