Studies of point defect formation and self-compensation in indium doped ZnO nanorods by STM and STS

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 12, 2008, Pages 6598-6602

  Gonzalez Carrazco A ^a   Herrera Zaldivar M ^a   Pal, U ^b  

^a CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA   (Mexico)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

Indium doped ZnO; Nanostructures; Point defects; Scanning tunneling microscopy; Self compensation

Indexed keywords

BINARY ALLOYS; ENERGY GAP; II-VI SEMICONDUCTORS; INDIUM; NANORODS; NANOSTRUCTURES; POINT DEFECTS; ZINC OXIDE;

DONOR AND ACCEPTOR; INDIUM-DOPED ZNO; MECHANISM OF FORMATION; N-TYPE CONDUCTIVITY; SCANNING TUNNELING SPECTROSCOPY; SELF COMPENSATION; SELF-COMPENSATION EFFECTS; ZNO NANOSTRUCTURES;

SCANNING TUNNELING MICROSCOPY;

EID: 58149316425     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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