Subcritical barrier AlN/GaN E/D-mode HFETs and inverters

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1620-1622

  Zimmermann, Tom ^a   Cao, Yu ^a   Li, Guowang ^a   Snider, Gregory ^a   Jena, Debdeep ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

Author keywords

2DEG; AlN; bottom up; circuit; D mode; depletion; E mode; E D mode; enhancement; GaN; HEMT; HFET; inverter; logic; normally off; subcritical; ultrathin

Indexed keywords

ALN; BOTTOM-UP; CIRCUIT; D-MODE; DEPLETION; E-MODE; E/D-MODE; GAN; HFET; INVERTER; LOGIC; NORMALLY OFF; SUBCRITICAL; ULTRA-THIN;

CRYSTALS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 79960103754     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001178     Document Type: Article

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