-
1
-
-
33645236010
-
Reliability and performance limitations in SiC power devices
-
10.1016/j.microrel.2005.10.013
-
Singh, R.: ' Reliability and performance limitations in SiC power devices ', Microelectron. Reliab., 2006, 46, p. 713-730 10.1016/j.microrel.2005.10.013
-
(2006)
Microelectron. Reliab.
, vol.46
, pp. 713-730
-
-
Singh, R.1
-
2
-
-
30344438824
-
Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes
-
10.1016/j.mee.2005.10.029 0167-9317
-
Wolborski, M., Bakowski, M., and Schöner, A.: ' Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes ', Microelectron. Eng., 2006, 83, p. 75-78 10.1016/j.mee.2005.10.029 0167-9317
-
(2006)
Microelectron. Eng.
, vol.83
, pp. 75-78
-
-
Wolborski, M.1
Bakowski, M.2
Schöner, A.3
-
3
-
-
17744366211
-
Study of reverse dark current in 4H-SiC avalanche photodiodes
-
10.1109/JQE.2005.843616 0018-9197
-
Guo, X., Beck, A.L., Li, X., Campbell, J.C., Emerson, D., and Sumakeris, J.: ' Study of reverse dark current in 4H-SiC avalanche photodiodes ', IEEE J. Quantum Electron., 2005, 41, p. 562-567 10.1109/JQE.2005.843616 0018-9197
-
(2005)
IEEE J. Quantum Electron.
, vol.41
, pp. 562-567
-
-
Guo, X.1
Beck, A.L.2
Li, X.3
Campbell, J.C.4
Emerson, D.5
Sumakeris, J.6
-
4
-
-
0034207180
-
Effects of ozone treatment of 4H-SiC(0001) surface
-
Kosugi, R., Ichimura, S., Kurokawa, A., Koike, K., Fukuda, K., Suzuki, S., Okushi, S., Yoshida, S., and Arai, K.: ' Effects of ozone treatment of 4H-SiC(0001) surface ', Appl. Surf. Sci., 2000, 159-160, p. 550-555
-
(2000)
Appl. Surf. Sci.
, vol.159-160
, pp. 550-555
-
-
Kosugi, R.1
Ichimura, S.2
Kurokawa, A.3
Koike, K.4
Fukuda, K.5
Suzuki, S.6
Okushi, S.7
Yoshida, S.8
Arai, K.9
-
5
-
-
33645217987
-
3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H-SiC devices
-
10.1016/j.microrel.2005.08.002
-
3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H-SiC devices ', Microelectron. Reliab., 2006, 46, p. 743-755 10.1016/j.microrel.2005.08.002
-
(2006)
Microelectron. Reliab.
, vol.46
, pp. 743-755
-
-
Wolborski, M.1
Bakowski, M.2
Ortiz, A.3
Pore, V.4
Schöner, A.5
Ritala, M.6
Leskelä, M.7
Hallén, A.8
-
6
-
-
10044235307
-
Si surfaces with atomic nitrogen
-
0003-6951
-
Si surfaces with atomic nitrogen ', Appl. Phys. Lett., 2004, 88, p. 4034-4036 0003-6951
-
(2004)
Appl. Phys. Lett.
, vol.88
, pp. 4034-4036
-
-
Losurdo, M.1
Giangregorio, M.M.2
Bruno, G.3
Brown, A.4
Kim, T.-H.5
-
7
-
-
0034511084
-
4 into nitrogen gas
-
10.1088/0022-3727/33/24/315 0022-3727
-
4 into nitrogen gas ', J. Phys. D, Appl. Phys., 2000, 33, p. 3223-3227 10.1088/0022-3727/33/24/315 0022-3727
-
(2000)
J. Phys. D, Appl. Phys.
, vol.33
, pp. 3223-3227
-
-
Yang, W.-D.1
Wang, P.-N.2
Liu, Z.-P.3
Mi, L.4
Chen, S.-Ch.5
Li, F.-M.6
-
8
-
-
0030141836
-
Can hydrogen stabilize the α-SiC(0001) √3×√3 surface?
-
Badziag, P.: ' Can hydrogen stabilize the α-SiC(0001) √3×√3 surface? ', Surface Science, 1996, 352-354, p. 396-400
-
(1996)
Surface Science
, vol.352-354
, pp. 396-400
-
-
Badziag, P.1
-
9
-
-
0032167090
-
A new carbon reach model of the α-SiC(0001) √3×√3 surface reconstruction
-
0039-6028
-
Badziag, P.: ' A new carbon reach model of the α-SiC(0001) √3×√3 surface reconstruction ', Surf. Sci., 1998, 412/413, p. 502 0039-6028
-
(1998)
Surf. Sci.
, vol.412-413
, pp. 502
-
-
Badziag, P.1
-
10
-
-
0037348141
-
2/4H-SiC
-
10.1063/1.1542935 0021-8979
-
2/4H-SiC ', J. Appl. Phys., 2003, 93, p. 2719-2722 10.1063/1.1542935 0021-8979
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 2719-2722
-
-
McDonald, K.1
Weller, R.A.2
Pantelides, S.T.3
Feldman, L.C.4
Chung, G.Y.5
Tin, C.C.6
Williams, J.R.7
-
11
-
-
2442687079
-
Passivation of hexagonal SiC surfaces by hydrogen termination
-
10.1088/0953-8984/16/17/016 0953-8984
-
Seyller, Th.: ' Passivation of hexagonal SiC surfaces by hydrogen termination ', J. Phys., Condens. Matter, 2004, 16, p. S1755-S1782 10.1088/0953-8984/16/17/016 0953-8984
-
(2004)
J. Phys., Condens. Matter
, vol.16
-
-
Seyller, Th.1
|