메뉴 건너뛰기




Volumn 43, Issue 2, 2007, Pages 129-130

Reduction of leakage current of 4H-SiC pin diodes after UV light exposure

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CLEANING; DIODES; LIGHT; SILICON CARBIDE; SURFACE TREATMENT;

EID: 33846564507     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20073494     Document Type: Article
Times cited : (5)

References (11)
  • 1
    • 33645236010 scopus 로고    scopus 로고
    • Reliability and performance limitations in SiC power devices
    • 10.1016/j.microrel.2005.10.013
    • Singh, R.: ' Reliability and performance limitations in SiC power devices ', Microelectron. Reliab., 2006, 46, p. 713-730 10.1016/j.microrel.2005.10.013
    • (2006) Microelectron. Reliab. , vol.46 , pp. 713-730
    • Singh, R.1
  • 2
    • 30344438824 scopus 로고    scopus 로고
    • Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes
    • 10.1016/j.mee.2005.10.029 0167-9317
    • Wolborski, M., Bakowski, M., and Schöner, A.: ' Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes ', Microelectron. Eng., 2006, 83, p. 75-78 10.1016/j.mee.2005.10.029 0167-9317
    • (2006) Microelectron. Eng. , vol.83 , pp. 75-78
    • Wolborski, M.1    Bakowski, M.2    Schöner, A.3
  • 3
    • 17744366211 scopus 로고    scopus 로고
    • Study of reverse dark current in 4H-SiC avalanche photodiodes
    • 10.1109/JQE.2005.843616 0018-9197
    • Guo, X., Beck, A.L., Li, X., Campbell, J.C., Emerson, D., and Sumakeris, J.: ' Study of reverse dark current in 4H-SiC avalanche photodiodes ', IEEE J. Quantum Electron., 2005, 41, p. 562-567 10.1109/JQE.2005.843616 0018-9197
    • (2005) IEEE J. Quantum Electron. , vol.41 , pp. 562-567
    • Guo, X.1    Beck, A.L.2    Li, X.3    Campbell, J.C.4    Emerson, D.5    Sumakeris, J.6
  • 8
    • 0030141836 scopus 로고    scopus 로고
    • Can hydrogen stabilize the α-SiC(0001) √3×√3 surface?
    • Badziag, P.: ' Can hydrogen stabilize the α-SiC(0001) √3×√3 surface? ', Surface Science, 1996, 352-354, p. 396-400
    • (1996) Surface Science , vol.352-354 , pp. 396-400
    • Badziag, P.1
  • 9
    • 0032167090 scopus 로고    scopus 로고
    • A new carbon reach model of the α-SiC(0001) √3×√3 surface reconstruction
    • 0039-6028
    • Badziag, P.: ' A new carbon reach model of the α-SiC(0001) √3×√3 surface reconstruction ', Surf. Sci., 1998, 412/413, p. 502 0039-6028
    • (1998) Surf. Sci. , vol.412-413 , pp. 502
    • Badziag, P.1
  • 11
    • 2442687079 scopus 로고    scopus 로고
    • Passivation of hexagonal SiC surfaces by hydrogen termination
    • 10.1088/0953-8984/16/17/016 0953-8984
    • Seyller, Th.: ' Passivation of hexagonal SiC surfaces by hydrogen termination ', J. Phys., Condens. Matter, 2004, 16, p. S1755-S1782 10.1088/0953-8984/16/17/016 0953-8984
    • (2004) J. Phys., Condens. Matter , vol.16
    • Seyller, Th.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.