InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Xing, K ^a   Gong, Y ^a   Bai, J ^a   Wang, T ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; CRYSTAL QUALITIES; DISLOCATION DENSITIES; ENHANCED PERFORMANCE; GAN LAYERS; HIGH QUALITY; INGAN/GAN; INGAN/GAN QUANTUM WELL; MULTIPLE QUANTUM-WELL STRUCTURES; NANOMASKS; NON-POLAR; OPTICAL EFFICIENCY; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM CONFINED STARK EFFECT; ROCKING CURVES; SELF-ORGANIZED;

COALESCENCE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80855128105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658803     Document Type: Article

References (12)

1. T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 39, 413 (2000). 10.1143/JJAP.39.413
2. Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, Appl. Phys. Express 2, 092101 (2009). 10.1143/APEX.2.092101
3. H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Electron. Lett. 43, 825 (2007). 10.1049/el:20071323
4. P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, and J. S. Speck, Appl. Phys. Lett. 75, 1706 (1999). 10.1063/1.124796
5. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, J. Cryst. Growth 221, 316 (2000). 10.1016/S0022-0248(00)00707-7
6. B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 88, 061908 (2006). 10.1063/1.2172159
7. K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, and R. Davis, Appl. Phys. Lett. 75, 196 (1999). 10.1063/1.124317
8. Kidoguchi, A. Ishibashi, G. Sugahara, and Y. Ban, Appl. Phys. Lett. 76, 3768 (2000). 10.1063/1.126775
9. B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 644 (2003). 10.1063/1.1593817
10. D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, J. Cryst. Growth 311, 2887 (2009). 10.1016/j.jcrysgro.2009.01.036
11. S. C. Ling, C. L. Chao, J. R. Chen, P. C. Liu, T. S. Ko, T. C. Lu, H. C. Kuo, S. C. Wang, S. J. Cheng, and J. D. Tsay, J. Cryst. Growth 312, 1316 (2010). 10.1016/j.jcrysgro.2009.10.047
12. F. Ranalli, P. J. Parbrook, J. Bai, K. B. Lee, T. Wang, and A. G. Cullis, Phys. Status Solidi C 6, S780 (2009). 10.1002/pssc.200880948