Non-polar AlN and GaN/AlN on r-plane sapphire

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Ranalli, Fabio ^a   Parbrook, Peter J ^a   Bai, Jie ^a   Lee, Kean B ^a   Wang, Tao ^a   Cullis, Antony G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; ALN; BAND-EDGE EMISSIONS; COMPLEX MICROSTRUCTURES; CRYSTALLOGRAPHIC ORIENTATIONS; DEVICE APPLICATION; HIGH RESOLUTION X RAY DIFFRACTION; HIGH TEMPERATURE; IN-PLANE STRUCTURES; LOW TEMPERATURE PHOTOLUMINESCENCE; MOVPE; NON-POLAR; NON-POLAR GAN; PLANE SAPPHIRE; SMOOTH LAYER; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL QUALITIES; SUBMICRON; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPE;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSTRUCTURE; OPTICAL PROPERTIES; SAPPHIRE; SOIL CONSERVATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

STACKING FAULTS;

EID: 78049238389     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880948     Document Type: Article

References (18)

1. P. Waltereit, O. Bradt, A. Trampert et al., Nature 406, 865 (2000).
2. Y.J. Sun, O. Brandt, S. Cronenmberg et al., Phys. Rev. B 67, 041306 (2003).
3. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, 1024(R).
4. K. Domen, K. Horino, A. Kuramata, and T. Tanashashi, Appl. Phys. Lett. 71, 1996(1997).
5. V. Ramachandran, R.M. Feenstra, W.L. Sarney, L. Salamanca-Riba et al., Appl. Phys. Lett. 75, 808 (1999).
6. A. Chakraborty, B.A. Haskell, S. Keller et al., Appl. Phys. Lett. 85, 5143 (2004).
7. M.C. Schmidt, K-C. Kim, R.M. Farrell, and D.F. Feezell, Jpn. J. Appl. Phys. 46, L190 (2007).
8. J. Bai, T. Wang, P.J. Parbrook, I.M. Ross, and A.G. Cullis, J. Cryst. Growth 63, 289 (2006).
9. M. Horita, J. Suda, and T. Kimoto, Appl. Phys. Lett. 89, 112117(2006).
10. H. Wang, C. Chen, Z. Gong et al., Appl. Phys. Lett. 84, 499 (2004).
11. T. Sasaki and S. Zembutsu, J. Appl. Phys. 61, 2533 (1987).
12. S. Ghosh, P. Misra, H.T. Grahn, B. Imer et al., J. Appl. Phys. 98, 026105 (2005).
13. B.J. Skromme, L. Chen, M.K. Mikhov, H. Yamane et al., Mater. Sci. Forum 457-460, 1613 (2004).
14. R. Liu, A. Bell, F.A. Ponce, G.Q. Chen et al., Appl. Phys. Lett. 86, 021908 (2005).
15. C. Stampfl and C.G. Van de Walle, Phys. Rev. B 57, 15052(R) (2005).
16. T. Paskova, R. Kroeger, S. Figge et al., Appl. Phys. Lett. 89, 051914 (2006).
17. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. Den-Baars, Appl. Phys. Lett. 81, 469 (2002).
18. J. F. Nicholas, Acta Cryst. 21, 880 (1966).