Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1316-1320

  Ling, Shih Chun ^a   Chao, Chu Li ^a,b   Chen, Jun Rong ^a   Liu, Po Chun ^b   Ko, Tsung Shine ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a   Cheng, Shun Jen ^a   Tsay, Jenq Dar ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

A-PLANE GAN; A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS; CRYSTAL QUALITIES; DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; ETCHING DEPTH; GAN TEMPLATE; OFF-AXIS; PHOTOLUMINESCENCE INTENSITIES; REGROWTH PROCESS; SCANNING ELECTRON MICROSCOPE; SURFACE PITS; SURFACE QUALITIES; TEM ANALYSIS; X RAY ROCKING CURVE;

DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANORODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SUPERCONDUCTING FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 77949838397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.047     Document Type: Article

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