Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

Electronics Letters

Volumn 43, Issue 15, 2007, Pages 825-827

  Zhong, H ^a   Tyagi, A ^a   Fellows, N N ^a   Chung, R B ^a   Saito, M ^a   Fujito, K ^b   Speck, J S ^a   Denbaars, S P ^a   Nakamura, S ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SUBSTRATES; WAVELENGTH;

BLUE-GREEN LIGHT EMITTING DIODE; EMISSION WAVELENGTH; OUTPUT POWER;

LIGHT EMITTING DIODES;

EID: 34547177722     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071323     Document Type: Article

References (19)

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