Understanding amorphous states of phase-change memory using frenkel-poole model

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Shih, Y H ^a,b   Lee, M H ^a,b   Breitwisch, M ^a   Cheek, R ^a   Wu, J Y ^a,b   Rajendran, B ^a   Zhu, Y ^a   Lai, E K ^a,b   Chen, C F ^a,b   Cheng, H Y ^a,b   Schrott, A ^a   Joseph, E ^a   Dasaka, R ^a   Raoux, S ^a   Lung, H L ^a,b   Lam, C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Macronix International Co Ltd   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS REGIONS; AMORPHOUS STATE; DEFECT STATE; FRENKEL-POOLE EMISSION; HIGH-RESISTANCE STATE; MLC OPERATION; NEW TOOLS;

ELECTRON DEVICES;

PHASE CHANGE MEMORY;

EID: 77952416665     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424229     Document Type: Conference Paper

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