Growth of gadolinium oxide films for advanced MOS structure

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 154-157

  Luptak R ^a   Frohlich K ^a   Rosova A ^a   Husekova K ^a   Tapajna M ^a,b   MacHajdiik D ^a   Jergel, M ^c   Espinos J P ^d   Mansilla, C ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INSTITUTE OF PHYSICS   (Slovakia)

^d INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

Author keywords

Gadolinium oxide; High dielectric; MOCVD; MOS structure

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE-VOLTAGE CHARACTERISTICS; GADOLINIUM OXIDE; HIGH-K DIELECTRICS; INTERFACIAL THICKNESS;

GADOLINIUM COMPOUNDS;

EID: 19944382809     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.059     Document Type: Conference Paper

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