SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 37, Issue 3, 2005, Pages 281-287

Growth and SIMS study of d.c.-sputtered indium oxide films on silicon

(6) Malar, P a Mohanty, Bhaskar Chandra a Balamurugan, A K b Rajagopalan, S b Tyagi, A K b Kasiviswanathan, S a

a INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

Author keywords

Interface; SIMS; Thin films; Transmission electron microscopy; XRD

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CONDUCTIVITY; FILM GROWTH; INDIUM COMPOUNDS; INTERFACES (MATERIALS); LIGHT ABSORPTION; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PHASE PURITY; REACTIVE SPUTTERING; SELECTED-AREA DIFFRACTION (SAD) PATTERNS; TRANSMITTANCE;

THIN FILMS;

EID: 14744278239 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.2016 Document Type: Article

Times cited : (3)

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