Growth and ion beam study of DC sputtered indium oxide films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 229, Issue 3-4, 2005, Pages 406-412

  Malar, P ^a   Vijayan, V ^b   Tyagi, A K ^c   Kasiviswanathan, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b INSTITUTE OF PHYSICS   (India)

^c INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Indium oxide film; Interface; PIXE; RBS; SIMS

Indexed keywords

DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ETCHING; INDIUM COMPOUNDS; ION BEAMS; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL RESISTIVITY; INDIUM OXIDE FILMS; PARTICLE INDUCED X-RAY EMISSIONS (PIXE);

METALLIC FILMS;

EID: 14544272763     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.114     Document Type: Article

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