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Volumn 85, Issue 5, 1999, Pages 2562-2567

Hydrogen interaction with implantation induced point defects in p-type silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000899930     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369575     Document Type: Article
Times cited : (29)

References (26)
  • 14
    • 85034501817 scopus 로고    scopus 로고
    • Ph.D. thesis, Royal Institute of Technology, Stockholm, Sweden
    • J. Lalita, Ph.D. thesis, Royal Institute of Technology, Stockholm, Sweden (1997).
    • (1997)
    • Lalita, J.1
  • 15
    • 0000542038 scopus 로고
    • Conf. Series No. 31, edited by N. B. Urli and J. W. Corbett Institute of Physics, Bristol
    • L. C. Kimerling, in Radiation Effects in Semiconductors 1976, Conf. Series No. 31, edited by N. B. Urli and J. W. Corbett (Institute of Physics, Bristol, 1977), p. 221.
    • (1977) Radiation Effects in Semiconductors 1976 , pp. 221
    • Kimerling, L.C.1
  • 16
    • 0001548018 scopus 로고
    • edited by T. S. Moss and S. Mahajan Elsevier, Amsterdam
    • G. Davies and R. C. Newman, in Handbook of Semiconductors, edited by T. S. Moss and S. Mahajan (Elsevier, Amsterdam, 1994), Vol. 3, p. 1557, and references therein.
    • (1994) Handbook of Semiconductors , vol.3 , pp. 1557
    • Davies, G.1    Newman, R.C.2
  • 18
    • 85034502928 scopus 로고    scopus 로고
    • FASTRIM is a modified version of TRIM85-90 which takes into account the multilayer target (interfaces) problems inherent with TRIM (unpublished)
    • H. J. Hay, FASTRIM is a modified version of TRIM85-90 which takes into account the multilayer target (interfaces) problems inherent with TRIM (unpublished).
    • Hay, H.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.