Hydrogen-related defects in boron doped p-type silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 705-708

  Malmbekk, H ^a   Vines, L ^a   Monakhov, E V ^a   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

Boron; DLTS; Hydrogen; Silicon

Indexed keywords

BORON CONCENTRATIONS; BORON-DOPED; BORON-DOPED SILICON; CONDUCTION BAND EDGE; DEFECT CHARACTERIZATION; DEFECT COMPLEX; DIVACANCIES; DLTS; INTERSTITIAL COMPLEXES; INTERSTITIAL OXYGEN; INTERSTITIAL PAIRS; INTRINSIC DEFECTS; IRRADIATION-INDUCED DEFECTS; K-CENTER; MINORITY CARRIER TRANSIENT SPECTROSCOPIES; P-TYPE; P-TYPE SILICON; PROTON IMPLANTED; VALENCE BAND EDGES;

BORON; CARRIER CONCENTRATION; COMPLEXATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; HYDROGEN; OXYGEN; PASSIVATION; SOLAR POWER GENERATION;

CRYSTAL DEFECTS;

EID: 79952682339     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000260     Document Type: Article

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