Hydrogen interaction with defects in electron-irradiated silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 235-238

  Feklisova, O ^a   Yarykin, N ^a   Yakimov, Eu ^a   Weber, J ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; HYDROGEN;

IRRADIATION INDUCED DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033322169     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00461-5     Document Type: Article

References (8)

1. S.J. Pearton et al., Appl. Phys. A 43 (1987) 153.
2. S.J. Pearton et al., Hydrogen in Crystalline Semiconductors, Springer, Berlin, 1992.
3. A.L. Parakhonskii et al., Semiconductors 30 (1996) 362.
4. B. Bech Nielsen et al., Mater. Sci. Eng. B 36 (1996) 259.
5. O.V. Feklisova, N. Yarykin, Semicond. Sci. Technol. 12 (1997) 742.
6. N. Yarykin et al., Mater. Sci. Forum 259-263 (1997) 301.
7. T. Zundel, J. Weber, Phys. Rev. B 39 (1989) 13549.
8. K. Irmscher et al., J. Phys. C 17 (1984) 6317.