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Volumn 159-160, Issue C, 2009, Pages 314-317
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Electronic properties of the interface between Si and sputter deposited indium-tin oxide
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Author keywords
Indium tin oxide; Interface; Silicon
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Indexed keywords
CAPACITANCE;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRONIC PROPERTIES;
HETEROJUNCTIONS;
HOLE TRAPS;
INDIUM COMPOUNDS;
INTERFACE STATES;
INTERFACES (MATERIALS);
OXIDE FILMS;
SILICON COMPOUNDS;
THERMIONIC EMISSION;
THERMODYNAMIC STABILITY;
TIN OXIDES;
CAPACITANCE VOLTAGE MEASUREMENTS;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
CURRENT-VOLTAGE;
DEEP LEVELS TRANSIENT SPECTROSCOPY;
INDIUM TIN OXIDE FILMS;
INDIUM-TIN OXIDE;
INTERFACIAL STATE;
MAGNETRON-SPUTTERING;
P-TYPE SI;
TEMPERATURE RANGE;
ACTIVATION ENERGY;
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EID: 67349169956
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2008.11.023 Document Type: Article |
Times cited : (7)
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References (12)
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