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Volumn 159-160, Issue C, 2009, Pages 314-317

Electronic properties of the interface between Si and sputter deposited indium-tin oxide

Author keywords

Indium tin oxide; Interface; Silicon

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; HOLE TRAPS; INDIUM COMPOUNDS; INTERFACE STATES; INTERFACES (MATERIALS); OXIDE FILMS; SILICON COMPOUNDS; THERMIONIC EMISSION; THERMODYNAMIC STABILITY; TIN OXIDES;

EID: 67349169956     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.11.023     Document Type: Article
Times cited : (7)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.