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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 77, Issue 1, 2000, Pages 110-114

Properties of ITO thin films deposited by RF magnetron sputtering at elevated substrate temperature

(3) Terzini, E a Thilakan, P a Minarini, C a

a ENEA CR Portici (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING TIN COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYSIS (EPMA); OPTICAL BAND GAPS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034249780 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00477-3 Document Type: Article

Times cited : (159)

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