Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 629-633

  Kuwano, K ^a,b   Ashok, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b JAPAN ENERGY CORPORATION   (Japan)

Author keywords

Defect reactions; Hydrogen passivation; Indium tin oxide silicon junctions; Interfacial defects; Sputter damage

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

INDIUM TIN OXIDE (ITO);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 19244372886     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80155-9     Document Type: Article

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