Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5359-5370

  Nguyen, Phuong Hoa ^a   Hofmann, Karl R ^a   Paasch, Gernot ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION RESULTS; ATOMIC POSITIONS; CELL STRUCTURE; COMPARISON WITH EXPERIMENTS; DEFORMATION POTENTIAL; DIELECTRIC FUNCTIONS; DRIFT VELOCITIES; ELEMENTARY CELLS; EQUILIBRIUM CONDITIONS; FIT PARAMETERS; FORM FACTORS; FULL BAND STRUCTURES; FULL-BAND MONTE CARLO; HOLE DRIFT VELOCITIES; MODEL POTENTIAL; NONLOCAL PSEUDOPOTENTIALS; OPTICAL DEFORMATION; PER UNIT; PSEUDOPOTENTIALS; RECIPROCAL LATTICE VECTORS; TWO PARAMETER; TWO-MATERIALS; VELOCITY FIELD; WAVE NUMBERS; WIGNER-SEITZ CELL; WORK-ON-SILICON;

APPROXIMATION THEORY; ATOMS; BAND STRUCTURE; CELLS; CYTOLOGY; DEFORMATION; GERMANIUM; MONTE CARLO METHODS; SILICON;

PHONON SCATTERING;

EID: 18744404046     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510948     Document Type: Article

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