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Volumn 518, Issue 9, 2010, Pages 2437-2441
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Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys
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Author keywords
Hole; Mobility; Monte Carlo; SiGe; SiGeC
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Indexed keywords
DOPING CONCENTRATION;
DOPING EFFECTS;
FULL-BAND MONTE CARLO;
GE CONTENT;
HOLE DRIFT-MOBILITY;
HOLE TRANSPORTS;
IMPURITY SCATTERING;
IN-PLANE;
MOBILITY;
MOMENTUM RELAXATION;
MONTE CARLO;
NEW ALLOYS;
OUT-OF-PLANE;
POTENTIAL PARAMETERS;
SCATTERING STRENGTH;
SIGEC ALLOY;
STRAINED-SI;
WAVE THEORY;
CERIUM ALLOYS;
CRYSTAL IMPURITIES;
GERMANIUM;
HOLE CONCENTRATION;
HOLE MOBILITY;
MONTE CARLO METHODS;
SCATTERING;
SILICON;
SILICON CARBIDE;
TRANSPORT PROPERTIES;
SILICON ALLOYS;
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EID: 76049088639
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.10.147 Document Type: Article |
Times cited : (10)
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References (15)
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