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Volumn 518, Issue 9, 2010, Pages 2437-2441

Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

Author keywords

Hole; Mobility; Monte Carlo; SiGe; SiGeC

Indexed keywords

DOPING CONCENTRATION; DOPING EFFECTS; FULL-BAND MONTE CARLO; GE CONTENT; HOLE DRIFT-MOBILITY; HOLE TRANSPORTS; IMPURITY SCATTERING; IN-PLANE; MOBILITY; MOMENTUM RELAXATION; MONTE CARLO; NEW ALLOYS; OUT-OF-PLANE; POTENTIAL PARAMETERS; SCATTERING STRENGTH; SIGEC ALLOY; STRAINED-SI; WAVE THEORY;

EID: 76049088639     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.147     Document Type: Article
Times cited : (10)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.