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Volumn 50, Issue 10 PART 2, 2011, Pages

Effect of Y content in (TaC)1-xyx gate electrodes on flatband voltage control for Hf-based high-k: Gate stacks

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CANDIDATE MATERIALS; EFFECTIVE WORK FUNCTION; EQUIVALENT OXIDE THICKNESS; EXPERIMENTAL DATA; FLAT-BAND VOLTAGE; GATE ELECTRODES; GATE STACKS; GATE-LAST; METAL OXIDE SEMICONDUCTOR; STRUCTURAL AND ELECTRICAL PROPERTIES;

EID: 80054929797     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.10PA03     Document Type: Article
Times cited : (6)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.