Novel Vth tuning process for HfO2 CMOS with oxygen-doped TaCx

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 42-43

  Mizubayashi, W ^a   Akiyama, K ^b   Wang, W ^a   Ikeda, M ^b   Iwamoto, K ^b   Kamimuta, Y ^b   Hirano, A ^b   Ota, H ^a   Nabatame, T ^b   Toriumi, A ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; OXYGEN;

OXYGEN DOPING; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949088569     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588556     Document Type: Conference Paper

References (10)

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10. J. K. Schaeffer et al., J. Appl. Phys., 101, 014503 (2007).