Single metal/dual high-k gate stack with low Vth and precise gate profile control for highly manufacturable aggressively scaled CMISFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 527-530

  Mise, N ^a   Morooka, T ^a   Eimori, T ^a   Kamiyama, S ^a   Murayama, K ^b,c   Sato, M ^a   Ono, T ^a   Nara, Y ^a   Ohji, Y ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c Hitachi Kenki FineTech Co Ltd

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-K GATE STACKS;

ELECTRON DEVICES;

EID: 50249097266     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418991     Document Type: Conference Paper

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