Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 352-355

  Lu, Y ^a   Hall, S ^a   Tan, L Z ^a   Mitrovic, I Z ^a   Davey, W M ^a   Raeissi, B ^b   Engstrom O ^b   Cherkaoui, K ^c   Monaghan, S ^c   Hurley, P K ^c   Gottlob, H D B ^d   Lemme, M C ^d  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CONTROL THEORY; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; METAL RECOVERY; MOS CAPACITORS; SEMICONDUCTOR DEVICE MANUFACTURE;

CAPACITANCE-VOLTAGE MEASUREMENTS; GATE MATERIALS; HIGH DIELECTRIC CONSTANTS; LEAKAGE CURRENT EFFECTS; LOWER BOUNDS; MEASUREMENT FREQUENCIES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SEMICONDUCTOR TECHNOLOGIES;

SEMICONDUCTOR MATERIALS;

EID: 59949101436     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3025910     Document Type: Article

References (10)

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