High-k Al 2 O 3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers

Applied Surface Science

Volumn 256, Issue 19, 2010, Pages 5708-5713

  Akazawa, M ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

GaAs; Hydrofluoric acid; InGaAs; MIS; Si ICL

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; BONDING; CHEMICAL BONDS; CHEMICAL CLEANING; ENERGY GAP; GALLIUM ARSENIDE; HYDROFLUORIC ACID; III-V SEMICONDUCTORS; INTERFACE STATES; MANAGEMENT INFORMATION SYSTEMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SILICON WAFERS; SURFACE POTENTIAL;

ELECTRICAL INTERFACE; FREQUENCY DISPERSION; GAAS; HYSTERESIS EFFECT; INGAAS; INTERFACE CONTROL LAYER; INTERFACE STATE DENSITY; OPTIMAL CHEMICALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 77953128648     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.087     Document Type: Article

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