Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 213-216

  Feng, Y ^a   Zhu, M ^a   Liu, F ^a   Liu, J ^a   Han, H ^b   Han, Y ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Hot wire; Plasma enhanced chemical vapor deposition (PECVD); Poly Si; Structure

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; RAMAN SCATTERING; TUNGSTEN; VOLUME FRACTION; X RAY DIFFRACTION ANALYSIS;

CATALYZERS;

THIN FILMS;

EID: 0035800996     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01270-6     Document Type: Conference Paper

References (13)